The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 29, 2011
Filed:
Apr. 28, 2009
Seiji Nakahata, Hyogo, JP;
Ryu Hirota, Hyogo, JP;
Kensaku Motoki, Hyogo, JP;
Takuji Okahisa, Hyogo, JP;
Kouji Uematsu, Hyogo, JP;
Seiji Nakahata, Hyogo, JP;
Ryu Hirota, Hyogo, JP;
Kensaku Motoki, Hyogo, JP;
Takuji Okahisa, Hyogo, JP;
Kouji Uematsu, Hyogo, JP;
Sumitomo Electric Industries, Ltd., Osaka, JP;
Abstract
Seeds are implanted in a regular pattern upon an undersubstrate. An AlInGaN (0≦x≦1, 0≦y≦1, 0<x+y≦1) mixture crystal is grown on the seed implanted undersubstrate by a facet growth method. The facet growth makes facet pits above the seeds. The facets assemble dislocations to the pit bottoms from neighboring regions and make closed defect accumulating regions (H) under the facet bottoms. The closed defect accumulating regions (H) arrest dislocations permanently. Release of dislocations, radial planar defect assemblies and linear defect assemblies are forbidden. The surrounding accompanying low dislocation single crystal regions (Z) and extra low dislocation single crystal regions (Y) are low dislocation density single crystals.