Kouji Uematsu

Title: Kouji Uematsu: Innovator in AlInGaN Crystal Growth

Introduction

Kouji Uematsu is a notable inventor based in Hyogo, Japan. He has made significant contributions to the field of crystal growth, particularly in the development of AlInGaN mixture crystals. With a total of 4 patents to his name, Uematsu's work has advanced the understanding and application of semiconductor materials.

Latest Patents

Uematsu's latest patents focus on innovative methods for growing AlInGaN crystals. One of his patents describes a process where seeds are implanted in a regular pattern upon an undersubstrate. An AlInGaN mixture crystal is then grown on this seed-implanted undersubstrate using a facet growth method. This method creates facet pits above the seeds, which help assemble dislocations to the pit bottoms from neighboring regions. The result is the formation of closed defect accumulating regions that permanently arrest dislocations, thereby enhancing the quality of the crystal.

Career Highlights

Kouji Uematsu is currently employed at Sumitomo Electric Industries, Limited, where he continues to push the boundaries of crystal growth technology. His work has not only contributed to the advancement of semiconductor materials but has also positioned his company as a leader in this field.

Collaborations

Uematsu has collaborated with esteemed colleagues such as Seiji Nakahata and Ryu Hirota. Their combined expertise has fostered a productive environment for innovation and research.

Conclusion

Kouji Uematsu's contributions to the field of AlInGaN crystal growth exemplify the impact of innovative thinking in technology. His patents and ongoing work at Sumitomo Electric Industries, Limited, continue to influence the semiconductor industry.