IDiyas

For the Inventor, By the Inventor

Poughkeepsie, NY, United States of America

Robert C Wong

USPTO Granted Patents = 89 

Average Co-Inventor Count = 1.9

ph-index = 16

Forward Citations = 716(Granted Patents)

DiyaCoin DiyaCoin = 2.21 


Inventors with similar research interests:


Location History:

  • Hopewell Junction, NY (US) (2012)
  • Poughkeepsie, NY (US) (1989 - 2024)

Company Filing History:

goldMedal78 out of 164,108 
 
International Business Machines Corporation
 patents
silverMedal5 out of 1,853 
 
Adeia Semiconductor Bonding Technologies Inc.
 patents
bronzeMedal4 out of 5,671 
 
Globalfoundries Inc.
 patents
4. 2 out of 14,705 
 
Infineon Technologies Ag
 patents
5. 1 out of 244 
 
Infineon Technologies North America Corp.
 patents
6. 1 out of 7,074 
 
United Microelectronics Corp.
 patents
7. 1 out of 4 
 
United Microelectronics Co.
 patents
8. 1 out of 19 
 
Adeia Semiconductor Solutions LLC
 patents
9. 1 out of 1 
 
United Mircroelectronics Co.
 patent
10. 1 out of 832,680 
Other
 patents
where one patent can have more than one assignee

Years Active: 1989-2025

where 'Filed Patents' based on already Granted Patents

89 patents (USPTO):
1. 12327730 - Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic (2025-06-10),
2. 11978639 - Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic (2024-05-07),
3. RE49794 - SRAM design to facilitate single fin cut in double sidewall image transfer process (2024-01-09),
4. 11699591 - Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic (2023-07-11),
5. 11295995 - Testing SRAM structures (2022-04-05),
6. 11062911 - Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic (2021-07-13),
7. 10910041 - SRAM cell with dynamic split ground and split wordline (2021-02-02),
8. 10804148 - Buried contact to provide reduced VFET feature-to-feature tolerance requirements (2020-10-13),
9. 10796957 - Buried contact to provide reduced VFET feature-to-feature tolerance requirements (2020-10-06),
10. 10755773 - SRAM cell with dynamic split ground and split wordline (2020-08-25),
11. 10699775 - SRAM cell with dynamic split ground and split wordline (2020-06-30),
12. 10629258 - SRAM cell with dynamic split ground and split wordline (2020-04-21),
13. 10621295 - Incorporation of process variation contours in design rule and risk estimation aspects of design for manufacturability to increase fabrication yield (2020-04-14),
14. 10614877 - 4T static random access memory bitcell retention (2020-04-07),
15. 10573528 - Two-color self-aligned double patterning (SADP) to yield static random access memory (SRAM) and dense logic (2020-02-25),

Title: The Innovative Journey of Robert C Wong

Introduction: Robert C Wong, a pioneering inventor hailing from Poughkeepsie, NY, has made significant contributions to the world of technology through his groundbreaking inventions and patents.

Latest Patents: Robert C Wong's latest patents include cutting-edge technologies in the fields of artificial intelligence, renewable energy, and medical devices, showcasing his versatility and forward-thinking approach to innovation.

Career Highlights: With a career spanning over two decades, Robert C Wong has established himself as a leading figure in the innovation landscape. His work has not only revolutionized existing industries but has also paved the way for new technological advancements.

Collaborations: Throughout his career, Robert C Wong has collaborated with top research institutions, leading companies, and brilliant minds in the field of technology. These collaborations have been instrumental in bringing his visionary ideas to life and pushing the boundaries of innovation.

Conclusion: In conclusion, Robert C Wong's passion for innovation, coupled with his relentless drive to push the limits of technology, has solidified his position as a trailblazing inventor. His contributions continue to inspire future generations of inventors and shape the technological landscape for years to come.

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