The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 05, 2022

Filed:

Sep. 17, 2019
Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Robert Wong, Poughkeepsie, NY (US);

Alfred Bruno, Staatsburg, NY (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); H01L 21/66 (2006.01); H01L 27/11 (2006.01);
U.S. Cl.
CPC ...
H01L 22/14 (2013.01); H01L 22/22 (2013.01); H01L 27/1104 (2013.01);
Abstract

A technique relates probing a pass gate transistor in a static random access memory (SRAM) circuit. A gate probe is connected to a gate metal layer of the SRAM circuit, the gate metal layer being coupled to a gate of the pass gate transistor. A source probe is connected to a source metal layer of the SRAM circuit, the source metal layer being coupled to a source of the pass gate transistor. A drain probe is connected to a drain metal layer of the SRAM circuit, the drain metal layer being coupled to a drain of the pass gate transistor, the SRAM circuit comprising other transistors along with the pass gate transistor. The other transistors are free from connections for the probing so as not to cause the other transistors to have an unwanted effect on the pass gate transistor being probed.


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