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For the Inventor, By the Inventor

Dresden, Germany

Ran Yan

This inventor holds 22 USPTO granted patents and 9 published patent applications, primarily in Integrated Circuit Fabrication. Top assignees: Globalfoundries Inc., Globalfoundries Singapore Pte. Ltd., Marvell International Limited. Active years: 2014-2020.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ran Yan. Retrieved from https://idiyas.com/inventor/ran-yan

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 22 

% Patents Active = 54.5

Average Co-Inventor Count = 3.5

ph-index = 2

Forward Citations = 27(Granted Patents)


Company Filing History:

goldMedal19 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal2 out of 1,060 
 
Globalfoundries Singapore Pte. Ltd.
 patents
bronzeMedal1 out of 5,162 
 
Marvell International Limited
 patents

Years Active: 2014-2020

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Areas of Expertise:
Memory Device Structure
FinFET Device
Integrated Circuits
Capacitor Structure
SOI Substrate
Epitaxial Growth
Strain Layer
MOSFET Devices
Silicide Contacts
Fluorine Doping
Channel Alloy Layer
Nitrogen Implantation
22 patents (USPTO):Explore Patents
1. 10600843 - Memory device structure (2020-03-24),
2. 10134730 - FinFET device with enlarged channel regions (2018-11-20),
3. 9941348 - Method of forming a capacitor structure and capacitor structure (2018-04-10),
4. 9881841 - Methods for fabricating integrated circuits with improved implantation processes (2018-01-30),
5. 9748236 - FinFET device with enlarged channel regions (2017-08-29),
6. 9741625 - Method of forming a semiconductor device with STI structures on an SOI substrate (2017-08-22),
7. 9620589 - Integrated circuits and methods of fabrication thereof (2017-04-11),
8. 9614003 - Method of forming a memory device structure and memory device structure (2017-04-04),
9. 9466717 - Complex semiconductor devices of the SOI type (2016-10-11),
10. 9461145 - OPC enlarged dummy electrode to eliminate ski slope at eSiGe (2016-10-04),
11. 9460955 - Integrated circuits with shallow trench isolations, and methods for producing the same (2016-10-04),
12. 9324869 - Method of forming a semiconductor device and resulting semiconductor devices (2016-04-26),
13. 9324868 - Epitaxial growth of silicon for FinFETS with non-rectangular cross-sections (2016-04-26),
14. 9312189 - Methods for fabricating integrated circuits with improved implantation processes (2016-04-12),
15. 9263270 - Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure (2016-02-16),

Title: The Innovative Journey of Ran Yan

Introduction: Ran Yan, a visionary inventor based in Dresden, Germany, is renowned for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Ran Yan holds several patents in the areas of renewable energy, artificial intelligence, and sustainable transportation, showcasing his commitment to creating a more sustainable future.

Career Highlights: With a background in engineering and a passion for pushing the boundaries of what is possible, Ran Yan has led numerous successful projects that have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Ran Yan has collaborated with leading research institutions, universities, and tech companies to bring his ideas to life and turn them into impactful inventions that have garnered international recognition.

Conclusion: Ran Yan's relentless pursuit of innovation and his dedication to creating solutions for the challenges of tomorrow make him a true pioneer in the world of technology and a source of inspiration for aspiring inventors worldwide.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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