The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Nov. 20, 2018

Filed:

Jul. 06, 2017
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ming-Cheng Chang, Dresden, DE;

Ran Yan, Dresden, DE;

Bo Bai, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 21/306 (2006.01); H01L 21/3213 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0886 (2013.01); H01L 21/30604 (2013.01); H01L 21/32133 (2013.01); H01L 21/823418 (2013.01); H01L 21/823431 (2013.01); H01L 21/823437 (2013.01); H01L 21/823475 (2013.01);
Abstract

A method of manufacturing a semiconductor device includes providing a semiconductor layer, forming a plurality of semiconductor fins on a surface of the semiconductor layer extending in parallel to each other along a first direction parallel to the surface of the semiconductor layer, and forming a plurality of gate electrodes comprising longitudinal portions extending parallel to the semiconductor fins along the first direction.


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