IDiyas

For the Inventor, By the Inventor

Dresden, Germany

Bo Bai

USPTO Granted Patents = 7 

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 5(Granted Patents)


Location History:

  • Fishkill, NY (US) (2012)
  • White Plains, NY (US) (2013 - 2014)
  • Radebeul, DE (2014)
  • Dresden, DE (2017 - 2022)

Company Filing History:

goldMedal6 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal2 out of 164,108 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 927 
 
Globalfoundries U.S. Inc.
 patents
where one patent can have more than one assignee

Years Active: 2012-2022

where 'Filed Patents' based on already Granted Patents

7 patents (USPTO):
1. 11282798 - Chip corner areas with a dummy fill pattern (2022-03-22),
2. 10134730 - FinFET device with enlarged channel regions (2018-11-20),
3. 9748236 - FinFET device with enlarged channel regions (2017-08-29),
4. 8853752 - Performance enhancement in transistors by providing a graded embedded strain-inducing semiconductor region with adapted angles with respect to the substrate surface (2014-10-07),
5. 8779525 - Method for growing strain-inducing materials in CMOS circuits in a gate first flow (2014-07-15),
6. 8426265 - Method for growing strain-inducing materials in CMOS circuits in a gate first flow (2013-04-23),
7. 8178414 - NMOS architecture involving epitaxially-grown in-situ N-type-doped embedded eSiGe:C source/drain targeting (2012-05-15),

Title: Bo Bai - Innovator in Semiconductor Technology

Introduction

Bo Bai is a prominent inventor based in Dresden, Germany, known for his significant contributions to semiconductor technology. With a total of seven patents to his name, he has made remarkable advancements in the field, particularly in chip design and manufacturing processes.

Latest Patents

Among his latest patents, Bo Bai has developed innovative solutions such as "Chip corner areas with a dummy fill pattern" and "FinFET device with enlarged channel regions." The first patent focuses on structures for corner areas of a chip, incorporating dummy structures that provide dummy fill to enhance performance. The second patent outlines a method for manufacturing a semiconductor device, which includes forming semiconductor fins and gate electrodes to optimize device functionality.

Career Highlights

Throughout his career, Bo Bai has worked with leading companies in the semiconductor industry, including Globalfoundries Inc. and IBM. His experience in these organizations has allowed him to refine his expertise and contribute to cutting-edge technologies in semiconductor fabrication.

Collaborations

Bo Bai has collaborated with notable professionals in the field, including Ming-Cheng Chang and Ran Yan. These partnerships have further enriched his work and led to advancements in semiconductor technology.

Conclusion

Bo Bai's innovative work in semiconductor technology and his impressive portfolio of patents highlight his significant impact on the industry. His contributions continue to shape the future of chip design and manufacturing processes.

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