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For the Inventor, By the Inventor

Dresden, Germany

Bo Bai

This inventor holds 7 USPTO granted patents and 1 published patent application. Top assignees: Globalfoundries Inc., International Business Machines Corporation, Globalfoundries U.S. Inc.. Active years: 2012-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bo Bai. Retrieved from https://idiyas.com/inventor/bo-bai-nbotegd9

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 7 

% Patents Active = 57.1

Average Co-Inventor Count = 3.2

ph-index = 2

Forward Citations = 7(Granted Patents)


Location History:

  • Fishkill, NY (US) (2012)
  • White Plains, NY (US) (2013 - 2014)
  • Radebeul, DE (2014)
  • Dresden, DE (2017 - 2022)

Company Filing History:

goldMedal6 out of 5,671 
 
Globalfoundries Inc.
 patents
silverMedal2 out of 166,351 
 
International Business Machines Corporation
 patents
bronzeMedal1 out of 1,090 
 
Globalfoundries U.S. Inc.
 patents
where one patent can have more than one assignee

Years Active: 2012-2022

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7 patents (USPTO):Explore Patents
1. 11282798 - Chip corner areas with a dummy fill pattern (2022-03-22),
2. 10134730 - FinFET device with enlarged channel regions (2018-11-20),
3. 9748236 - FinFET device with enlarged channel regions (2017-08-29),
4. 8853752 - Performance enhancement in transistors by providing a graded embedded strain-inducing semiconductor region with adapted angles with respect to the substrate surface (2014-10-07),
5. 8779525 - Method for growing strain-inducing materials in CMOS circuits in a gate first flow (2014-07-15),
6. 8426265 - Method for growing strain-inducing materials in CMOS circuits in a gate first flow (2013-04-23),
7. 8178414 - NMOS architecture involving epitaxially-grown in-situ N-type-doped embedded eSiGe:C source/drain targeting (2012-05-15),

Title: Bo Bai - Innovator in Semiconductor Technology

Introduction

Bo Bai is a prominent inventor based in Dresden, Germany, known for his significant contributions to semiconductor technology. With a total of seven patents to his name, he has made remarkable advancements in the field, particularly in chip design and manufacturing processes.

Latest Patents

Among his latest patents, Bo Bai has developed innovative solutions such as "Chip corner areas with a dummy fill pattern" and "FinFET device with enlarged channel regions." The first patent focuses on structures for corner areas of a chip, incorporating dummy structures that provide dummy fill to enhance performance. The second patent outlines a method for manufacturing a semiconductor device, which includes forming semiconductor fins and gate electrodes to optimize device functionality.

Career Highlights

Throughout his career, Bo Bai has worked with leading companies in the semiconductor industry, including Globalfoundries Inc. and IBM. His experience in these organizations has allowed him to refine his expertise and contribute to cutting-edge technologies in semiconductor fabrication.

Collaborations

Bo Bai has collaborated with notable professionals in the field, including Ming-Cheng Chang and Ran Yan. These partnerships have further enriched his work and led to advancements in semiconductor technology.

Conclusion

Bo Bai's innovative work in semiconductor technology and his impressive portfolio of patents highlight his significant impact on the industry. His contributions continue to shape the future of chip design and manufacturing processes.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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