The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Nov. 27, 2013
Applicant:
Globalfoundries, Inc., Grand Cayman, KY;
Inventors:
Ran Yan, Dresden, DE;
Nicolas Sassiat, Dresden, DE;
Alban Zaka, Dresden, DE;
Kun-Hsien Lin, Dresden, DE;
Assignee:
GLOBALFOUNDRIES, INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 21/762 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01);
Abstract
Integrated circuits with electrical components near shallow trench isolations and methods for producing such integrated circuits are provided. The method includes forming a trench is a substrate, where the trench has a trench surface. A barrier layer including silicon and germanium is formed overlying the trench surface. A shallow trench isolation is then formed with a core overlying the barrier layer, where the core includes a shallow trench isolation insulator.