Nicolas Sassiat

This inventor holds 13 USPTO granted patents and 5 published patent applications, primarily in Integrated Circuit Fabrication. Top assignees: Globalfoundries Inc., Globalfoundries Singapore Pte. Ltd.. Active years: 2014-2021.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Nicolas Sassiat. Retrieved from https://idiyas.com/inventor/nicolas-sassiat

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 13 (Patent Applications = 5)

% Patents Active = 46.2

Average Co-Inventor Count = 3.9

ph-index = 1

Forward Citations = 12(Granted Patents)

Location History:

Dresdan, DE (2014)
Dresden, DE (2015 - 2021)

Company Filing History:

Globalfoundries Singapore Pte. Ltd.

patents

Years Active: 2014-2021

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Areas of Expertise:

Semiconductor Structure

Varactor

Transistor

Integrated Circuits

Shallow Trench Isolation

Fluorine Doping

Polycrystalline Silicon

MOSFET Devices

Silicide Contacts

Ion Implantation

Heat Treatment

Strain-Inducing Material

13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10886419 - Semiconductor structure including a varactor and method for the formation thereof (2021-01-05),

2. 9960284 - Semiconductor structure including a varactor (2018-05-01),

3. 9812573 - Semiconductor structure including a transistor having stress creating regions and method for the formation thereof (2017-11-07),

4. 9620589 - Integrated circuits and methods of fabrication thereof (2017-04-11),

5. 9460955 - Integrated circuits with shallow trench isolations, and methods for producing the same (2016-10-04),

6. 9396950 - Low thermal budget schemes in semiconductor device fabrication (2016-07-19),

7. 9263270 - Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure (2016-02-16),

8. 9231045 - Methods for fabricating integrated circuits with polycrystalline silicon resistor structures using a replacment gate process flow, and the integrated circuits fabricated thereby (2016-01-05),

9. 9136266 - Gate oxide quality for complex MOSFET devices (2015-09-15),

10. 9029214 - Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts (2015-05-12),

11. 8999803 - Methods for fabricating integrated circuits with the implantation of fluorine (2015-04-07),

12. 8951877 - Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment (2015-02-10),

13. 8877582 - Methods of inducing a desired stress in the channel region of a transistor by performing ion implantation/anneal processes on the gate electrode (2014-11-04),

Title: Inventor Nicolas Sassiat

Introduction: Nicolas Sassiat is a renowned inventor based in Dresden, Germany, known for his groundbreaking innovations in various fields.

Latest Patents: Nicolas Sassiat holds several patents in the areas of renewable energy technologies, advanced materials, and medical devices, showcasing his diverse range of expertise.

Career Highlights: With a career spanning over two decades, Nicolas Sassiat has worked with leading research institutions and universities to develop cutting-edge solutions that have had a significant impact on industries worldwide.

Collaborations: Throughout his career, Nicolas Sassiat has collaborated with top companies, patent attorneys, and fellow inventors to bring his ideas to life and ensure their successful commercialization.

Conclusion: Nicolas Sassiat's passion for innovation and his dedication to pushing the boundaries of technology make him a key figure in the world of inventors and patents.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

5 patents pending: