Growing community of inventors

Dresden, Germany

Nicolas Sassiat

Average Co-Inventor Count = 3.92

ph-index = 1

The patent ph-index is calculated by counting the number of publications for which an author has been cited by other authors at least that same number of times.

Forward Citations = 12

Nicolas SassiatJan Hoentschel (7 patents)Nicolas SassiatRan Yan (7 patents)Nicolas SassiatStefan Flachowsky (3 patents)Nicolas SassiatRalf Richter (3 patents)Nicolas SassiatAlban Zaka (3 patents)Nicolas SassiatTorben Balzer (3 patents)Nicolas SassiatChristian Schippel (2 patents)Nicolas SassiatAlexandru Romanescu (2 patents)Nicolas SassiatKun-Hsien Lin (2 patents)Nicolas SassiatPeter Javorka (1 patent)Nicolas SassiatMaciej Wiatr (1 patent)Nicolas SassiatShiang Yang Ong (1 patent)Nicolas SassiatEl Mehdi Bazizi (1 patent)Nicolas SassiatCarsten Grass (1 patent)Nicolas SassiatArkadiusz Malinowski (1 patent)Nicolas SassiatChung Foong Tan (1 patent)Nicolas SassiatNicolas Sassiat (13 patents)Jan HoentschelJan Hoentschel (174 patents)Ran YanRan Yan (22 patents)Stefan FlachowskyStefan Flachowsky (109 patents)Ralf RichterRalf Richter (107 patents)Alban ZakaAlban Zaka (28 patents)Torben BalzerTorben Balzer (3 patents)Christian SchippelChristian Schippel (9 patents)Alexandru RomanescuAlexandru Romanescu (7 patents)Kun-Hsien LinKun-Hsien Lin (2 patents)Peter JavorkaPeter Javorka (63 patents)Maciej WiatrMaciej Wiatr (36 patents)Shiang Yang OngShiang Yang Ong (22 patents)El Mehdi BaziziEl Mehdi Bazizi (20 patents)Carsten GrassCarsten Grass (12 patents)Arkadiusz MalinowskiArkadiusz Malinowski (12 patents)Chung Foong TanChung Foong Tan (7 patents)
..
Inventor’s number of patents
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Strength of working relationships

Company Filing History:

1. Globalfoundries Inc. (12 from 5,671 patents)

2. Globalfoundries Singapore Pte. Ltd. (1 from 1,020 patents)


13 patents:

1. 10886419 - Semiconductor structure including a varactor and method for the formation thereof

2. 9960284 - Semiconductor structure including a varactor

3. 9812573 - Semiconductor structure including a transistor having stress creating regions and method for the formation thereof

4. 9620589 - Integrated circuits and methods of fabrication thereof

5. 9460955 - Integrated circuits with shallow trench isolations, and methods for producing the same

6. 9396950 - Low thermal budget schemes in semiconductor device fabrication

7. 9263270 - Method of forming a semiconductor device structure employing fluorine doping and according semiconductor device structure

8. 9231045 - Methods for fabricating integrated circuits with polycrystalline silicon resistor structures using a replacment gate process flow, and the integrated circuits fabricated thereby

9. 9136266 - Gate oxide quality for complex MOSFET devices

10. 9029214 - Integrated circuits and methods for fabricating integrated circuits with improved silicide contacts

11. 8999803 - Methods for fabricating integrated circuits with the implantation of fluorine

12. 8951877 - Transistor with embedded strain-inducing material formed in cavities based on an amorphization process and a heat treatment

13. 8877582 - Methods of inducing a desired stress in the channel region of a transistor by performing ion implantation/anneal processes on the gate electrode

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12/24/2025
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