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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 9231045 B1

PDFFull Text
Date of Patent:
Jan. 05, 2016

Filed:

Apr. 30, 2013

Methods for fabricating integrated circuits with polycrystalline silicon resistor structures using a replacment gate process flow, and the integrated circuits fabricated thereby

Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Jan Hoentschel, Dresden, DE;

Stefan Flachowsky, Dresden, DE;

Nicolas Sassiat, Dresden, DE;

Ralf Richter, Dresden, DE;

Assignee:

GLOBALFOUNDRIES, INC., Grand Cayman, KY;

Attorney:

Ingrassia Fisher & Lorenz, P.C.

Primary Examiner:

Hrayr A Sayadian

Int. Cl.
CPC ...
H01L 49/02 (2006.01); H01L 27/06 (2006.01); H01L 29/66 (2006.01); H01L 29/49 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 28/20 (2013.01); H01L 27/0629 (2013.01); H01L 29/4966 (2013.01); H01L 29/6656 (2013.01); H01L 29/66545 (2013.01); H01L 29/66606 (2013.01); H01L 29/78 (2013.01);
Abstract

Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, an integrated circuit includes a first transistor structure that includes an etch-stop material layer, a first workfunction material layer disposed over the etch-stop material layer, a second workfunction material layer disposed over the first workfunction material layer, and a metal fill material disposed over the second workfunction material layer. The integrated circuit further includes a second transistor structure that includes a layer of the etch-stop material, a layer of the second workfunction material disposed over the etch-stop material layer, and a layer of the metal fill material disposed over the second workfunction material layer. Still further, the integrated circuit includes a resistor structure that includes a layer of the etch-stop material, a layer of the metal fill material disposed over the etch-stop material layer, and a silicon material layer disposed over the metal fill material layer.

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