The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 12, 2015

Filed:

Jan. 14, 2013
Applicant:

Globalfoundries, Inc., Grand Cayman, KY;

Inventors:

Jan Hoentschel, Dresden, DE;

Stefan Flachowsky, Dresden, DE;

Nicolas Sassiat, Dresden, DE;

Ran Yan, Dresden, DE;

Assignee:

GLOBALFOUNDRIES, Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/8238 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/665 (2013.01); H01L 29/78 (2013.01);
Abstract

Integrated circuits and methods for fabricating integrated circuits are provided herein. In an embodiment, a method for fabricating an integrated circuit includes forming over a semiconductor substrate a gate structure. The method further includes depositing a non-conformal spacer material around the gate structure. A protection mask is formed over the non-conformal spacer material. The method etches the non-conformal spacer material and protection mask to form a salicidation spacer. Further, a self-aligned silicide contact is formed adjacent the salicidation spacer.


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