The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2016
Filed:
Oct. 01, 2014
Applicant:
Globalfoundries Inc., Grand Cayman, KY;
Inventors:
Assignee:
GLOBALFOUNDRIES INC., Grand Cayman, KY;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/3213 (2006.01); G03F 1/36 (2012.01); H01L 29/66 (2006.01); H01L 21/762 (2006.01); H01L 29/165 (2006.01); H01L 29/08 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01); H01L 29/49 (2006.01); G03F 1/72 (2012.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 29/66545 (2013.01); G03F 1/72 (2013.01); H01L 21/02164 (2013.01); H01L 21/32139 (2013.01); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/0847 (2013.01); H01L 29/165 (2013.01); H01L 29/4916 (2013.01); H01L 29/66636 (2013.01); H01L 29/7848 (2013.01); H01L 21/0337 (2013.01);
Abstract
Enlarging the dummy electrode to the STI top width size by OPC cut mask correction and the resulting device are disclosed. Embodiments include forming an STI region in a silicon substrate, the STI region having a top width; and forming a dummy electrode on the STI region and a gate electrode on the silicon substrate, the dummy electrode having a width greater than or equal to the STI region top width.