The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 11, 2016

Filed:

Apr. 07, 2015
Applicant:

Globalfoundries Inc., Grand Cayman, KY;

Inventors:

Ran Yan, Dresden, DE;

Alban Zaka, Dresden, DE;

Jan Hoentschel, Dresden, DE;

Assignee:

GLOBALFOUNDRIES Inc., Grand Cayman, KY;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 21/82 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 21/8234 (2006.01); H01L 21/8238 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7838 (2013.01); H01L 21/823418 (2013.01); H01L 21/823814 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/66636 (2013.01);
Abstract

The present disclosure provides, in a first aspect, a semiconductor device including an SOI substrate portion, a gate structure formed on the SOI substrate portion and source and drain regions having respective source and drain height levels, wherein the source and drain height levels are different. The semiconductor device may be formed by forming a gate structure over an SOI substrate portion, recessing the SOI substrate portion at one side of the gate structure so as to form a trench adjacent to the gate structure and forming source and drain regions at opposing sides of the gate structure, one of the source and drain regions being formed in the trench.


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