The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 10600843 B1

Date of Patent:

Mar. 24, 2020

Filed:

Feb. 09, 2017

Memory device structure

Applicant:

Marvell International Ltd., Hamilton, BM;

Inventors:

Ralf Richter, Radebeul, DE;

Yu-Teh Chiang, Dresden, DE;

Ran Yan, Dresden, DE;

Assignee:

MARVELL INTERNATIONAL LTD., Hamilton, BM;

Attorney:

Primary Examiner:

Moazzam Hossain

Int. Cl.

CPC ...

H01L 43/02 (2006.01); H01L 43/08 (2006.01); H01L 43/10 (2006.01); H01L 27/22 (2006.01); G11C 11/16 (2006.01); H01L 43/12 (2006.01);

U.S. Cl.

CPC ...

H01L 27/228 (2013.01); G11C 11/161 (2013.01); H01L 43/02 (2013.01); H01L 43/08 (2013.01); H01L 43/10 (2013.01); H01L 43/12 (2013.01);

Abstract

A memory device structure includes a wafer substrate and a magnetic tunnel junction (MTJ) positioned above an upper surface of the wafer substrate. The MTJ includes a first magnetic layer, a second magnetic layer laterally adjacent the first magnetic layer, and a nonmagnetic layer interposed between the first and second magnetic layers, wherein the first magnetic layer, the nonmagnetic layer and the second magnetic layer comprise a substantially vertical layer stack that extends along a first direction that is substantially perpendicular to the upper surface of the wafer substrate. A first contact is electrically coupled to the first magnetic layer and a second contact is electrically coupled to the second magnetic layer.

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