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For the Inventor, By the Inventor

Elgin, SC, United States of America

Rakesh B Jain

USPTO Granted Patents = 52 

 

Average Co-Inventor Count = 5.5

ph-index = 9

Forward Citations = 315(Granted Patents)

Forward Citations (Not Self Cited) = 212(Dec 10, 2025)


Inventors with similar research interests:


Location History:

  • Columbia, SC (US) (2015 - 2023)
  • Elgin, SC (US) (2023)

Company Filing History:

goldMedal52 out of 378 
 
Sensor Electronic Technology, Inc.
 patents

Years Active: 2015-2025

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Areas of Expertise:
Heterostructure
Optoelectronic Device
Group III Nitride
Semiconductor Layer
Epitaxy Technique
Modulation Doping
Compositional Inhomogeneities
Stress Management
Threading Dislocations
Patterned Layer Design
Semiconductor Structure
Layer Growth
52 patents (USPTO):Explore Patents
1. 12300758 - Heterostructure including a semiconductor layer with graded composition (2025-05-13),
2. 12100779 - Optoelectronic device with reduced optical loss (2024-09-24),
3. 11830963 - Heterostructure including a semiconductor layer with graded composition (2023-11-28),
4. 11784280 - Optoelectronic device with reduced optical loss (2023-10-10),
5. 11611011 - Heterostructure including a semiconductor layer with graded composition (2023-03-21),
6. 11508871 - Heterostructure including a semiconductor layer with a varying composition (2022-11-22),
7. RE48943 - Group III nitride heterostructure for optoelectronic device (2022-02-21),
8. 10923623 - Semiconductor layer including compositional inhomogeneities (2021-02-16),
9. 10903391 - Optoelectronic device with modulation doping (2021-01-26),
10. 10804423 - Optoelectronic device with modulation doping (2020-10-13),
11. 10629770 - Semiconductor method having annealing of epitaxially grown layers to form semiconductor structure with low dislocation density (2020-04-21),
12. 10622515 - Patterned layer design for group III nitride layer growth (2020-04-14),
13. 10615307 - Semiconductor structure with inhomogeneous regions (2020-04-07),
14. 10535793 - Group III nitride heterostructure for optoelectronic device (2020-01-14),
15. 10490697 - Epitaxy technique for growing semiconductor compounds (2019-11-26),

Title: The Innovative Journey of Rakesh B Jain

Introduction: Rakesh B Jain, a pioneering inventor hailing from Elgin, SC (US), has made significant contributions to the field of innovation through his groundbreaking work in various patents.

Latest Patents: Rakesh B Jain's recent patents include cutting-edge technologies in the fields of biotechnology, medical devices, and sustainable energy solutions, showcasing his versatility and forward-thinking approach.

Career Highlights: With a career spanning over two decades, Rakesh B Jain has established himself as a leading figure in the innovation landscape, with numerous patents that have revolutionized industries and improved the lives of many.

Collaborations: Throughout his career, Rakesh B Jain has collaborated with top research institutions, universities, and companies to bring his inventions to life, fostering a culture of innovation and excellence in the process.

Conclusion: Rakesh B Jain's relentless pursuit of innovation and his passion for creating impactful solutions have solidified his reputation as a visionary inventor, shaping the future of technology and leaving a lasting legacy in the world of inventions.

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