The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 14, 2020
Filed:
May. 25, 2018
Sensor Electronic Technology, Inc., Columbia, SC (US);
Rakesh Jain, Columbia, SC (US);
Wenhong Sun, Lexington, SC (US);
Jinwei Yang, Columbia, SC (US);
Maxim S. Shatalov, Lexington, SC (US);
Alexander Dobrinsky, Silver Spring, MD (US);
Michael Shur, Vienna, VA (US);
Remigijus Gaska, Columbia, SC (US);
Sensor Electronic Technology, Inc., Columbia, SC (US);
Abstract
A method of fabricating a device using a layer with a patterned surface for improving the growth of semiconductor layers, such as group III nitride-based semiconductor layers with a high concentration of aluminum, is provided. The patterned surface can include a substantially flat top surface and a plurality of stress reducing regions, such as openings. The substantially flat top surface can have a root mean square roughness less than approximately 0.5 nanometers, and the stress reducing regions can have a characteristic size between approximately 0.1 microns and approximately five microns and a depth of at least 0.2 microns. A layer of group-III nitride material can be grown on the first layer and have a thickness at least twice the characteristic size of the stress reducing regions. A device including one or more of these features also is provided.