Jinwei Yang

This inventor holds 74 USPTO granted patents and 5 EPO patents, primarily in Optoelectronic Devices (CPC class H01L). Top assignee: Sensor Electronic Technology, Inc.. Active years: 2004-2022.

USPTO Granted Patents = 74

% Patents Active = 100.0

EPO Patents = 5 (Patent Applications = 5)

Average Co-Inventor Count = 5.2

ph-index = 18

Forward Citations = 635(Granted Patents)

Forward Citations (Not Self Cited) = 524(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Lexington, SC (US) (2004 - 2016)
Columbia, SC (US) (2013 - 2022)

Company Filing History:

74 out of 382

Sensor Electronic Technology, Inc.

patents

Years Active: 2004-2022

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Areas of Expertise:

Group III Nitride

Epitaxy Technique

Optoelectronic Device

Semiconductor Structure

Doping

Stress-Reducing Buffer

Deep Ultraviolet LED

Patterned Layer Design

Compositional Inhomogeneities

Non-Uniform Superlattice

Threading Dislocations

Transparent Conductive Regions

74 patents (USPTO):Sort by Forward CitationsExplore Patents

1. RE48943 - Group III nitride heterostructure for optoelectronic device (2022-02-21),

2. 10923623 - Semiconductor layer including compositional inhomogeneities (2021-02-16),

3. 10622515 - Patterned layer design for group III nitride layer growth (2020-04-14),

4. 10535793 - Group III nitride heterostructure for optoelectronic device (2020-01-14),

5. 10497829 - Semiconductor material doping (2019-12-03),

6. 10490713 - Ultraviolet device encapsulant (2019-11-26),

7. 10490697 - Epitaxy technique for growing semiconductor compounds (2019-11-26),

8. 10460952 - Stress relieving semiconductor layer (2019-10-29),

9. 10297460 - Stress relieving semiconductor layer (2019-05-21),

10. 10276749 - Ultraviolet reflective rough adhesive contact (2019-04-30),

11. 10243100 - Semiconductor layer including compositional inhomogeneities (2019-03-26),

12. 10211048 - Epitaxy technique for reducing threading dislocations in stressed semiconductor compounds (2019-02-19),

13. 10199537 - Semiconductor structure with stress-reducing buffer structure (2019-02-05),

14. 10199536 - Patterned layer design for group III nitride layer growth (2019-02-05),

15. 10199535 - Semiconductor structure with stress-reducing buffer structure (2019-02-05),

Title: **Jinwei Yang: A Pioneer in Optoelectronic Device Innovation**

Introduction

Jinwei Yang, based in Columbia, SC, is a prolific inventor with a remarkable portfolio of 74 patents. His contributions to the field of optoelectronics have paved the way for advancements in semiconductor technology. Yang's work focuses on enhancing the performance and reliability of optoelectronic devices through innovative materials and structures.

Latest Patents

Among his latest patents, one notable invention is the "Group III nitride heterostructure for optoelectronic device." This patent discusses heterostructures designed specifically for use in optoelectronic devices. By configuring various parameters of the heterostructure, Yang aims to improve the reliability of these devices. Additionally, he has worked on a patent titled "Semiconductor layer including compositional inhomogeneities," which provides a device comprising a semiconductor layer with multiple compositional inhomogeneous regions. This invention highlights the significance of the average band gap differences and their impact on device performance.

Career Highlights

Yang has established himself as a significant contributor to the field while working with Sensor Electronic Technology, Inc. His extensive patent portfolio not only showcases his innovative capabilities but also reflects his commitment to advancing technology in the optoelectronics arena.

Collaborations

Throughout his career, Yang has collaborated with esteemed colleagues, including Michael Shur and Remigijus Gaska. These partnerships have facilitated knowledge sharing and fostered an environment of innovation, further driving the advancement of technology within the industry.

Conclusion

Jinwei Yang's contributions to the field of optoelectronics through his numerous patents highlight his role as a leading inventor. As technology continues to evolve, Yang's innovations will undoubtedly continue to influence the future of optoelectronic devices, making a lasting impact in this specialized domain.