The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jan. 14, 2020
Filed:
May. 23, 2017
Applicant:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Inventors:
Rakesh Jain, Columbia, SC (US);
Maxim S. Shatalov, Columbia, SC (US);
Jinwei Yang, Columbia, SC (US);
Alexander Dobrinsky, Loudonville, NY (US);
Michael Shur, Latham, NY (US);
Remigijus Gaska, Columbia, SC (US);
Assignee:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/04 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/12 (2010.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/007 (2013.01); H01L 33/0075 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 33/145 (2013.01);
Abstract
Heterostructures for use in optoelectronic devices are described. One or more parameters of the heterostructure can be configured to improve the reliability of the corresponding optoelectronic device. The materials used to create the active structure of the device can be considered in configuring various parameters the n-type and/or p-type sides of the heterostructure.