The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 21, 2019
Filed:
Apr. 25, 2017
Applicant:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Inventors:
Maxim S. Shatalov, Columbia, SC (US);
Jinwei Yang, Columbia, SC (US);
Wenhong Sun, Columbia, SC (US);
Rakesh Jain, Columbia, SC (US);
Michael Shur, Latham, NY (US);
Remigijus Gaska, Columbia, SC (US);
Assignee:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/15 (2006.01); H01L 31/0256 (2006.01); H01L 21/308 (2006.01); H01L 29/66 (2006.01); H01L 21/02 (2006.01); H01L 33/12 (2010.01); H01L 29/20 (2006.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 21/308 (2013.01); H01L 21/0237 (2013.01); H01L 21/0254 (2013.01); H01L 21/02458 (2013.01); H01L 21/02505 (2013.01); H01L 29/158 (2013.01); H01L 29/2003 (2013.01); H01L 29/66075 (2013.01); H01L 33/12 (2013.01); H01L 21/0265 (2013.01); H01L 21/02639 (2013.01); H01L 33/007 (2013.01);
Abstract
A semiconductor structure, such as a group III nitride-based semiconductor structure is provided. The semiconductor structure includes a cavity containing semiconductor layer. The cavity containing semiconductor layer can have a thickness greater than two monolayers and a multiple cavities. The cavities can have a characteristic size of at least one nanometer and a characteristic separation of at least five nanometers.