The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 28, 2023
Filed:
Feb. 09, 2022
Applicant:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Inventors:
Rakesh Jain, Columbia, SC (US);
Maxim S. Shatalov, Columbia, SC (US);
Alexander Dobrinsky, Vienna, VA (US);
Michael Shur, Vienna, VA (US);
Assignee:
Sensor Electronic Technology, Inc., Columbia, SC (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 31/0352 (2006.01); H01L 33/14 (2010.01); H01L 31/105 (2006.01); H01L 31/0224 (2006.01); H01L 31/0304 (2006.01); H01L 33/02 (2010.01); H01L 31/109 (2006.01); H01L 33/04 (2010.01); H01L 33/06 (2010.01);
U.S. Cl.
CPC ...
H01L 33/002 (2013.01); H01L 31/022408 (2013.01); H01L 31/03048 (2013.01); H01L 31/0352 (2013.01); H01L 31/035236 (2013.01); H01L 31/105 (2013.01); H01L 31/109 (2013.01); H01L 33/0025 (2013.01); H01L 33/025 (2013.01); H01L 33/04 (2013.01); H01L 33/14 (2013.01); H01L 33/145 (2013.01); H01L 33/32 (2013.01); H01L 33/06 (2013.01); H01L 2933/0008 (2013.01);
Abstract
An improved heterostructure for an optoelectronic device is provided. The heterostructure includes an active region, an electron blocking layer, and a p-type contact layer. The heterostructure can include a p-type interlayer located between the electron blocking layer and the p-type contact layer. In an embodiment, the electron blocking layer can have a region of graded transition. The p-type interlayer can also include a region of graded transition.