The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 04, 2026

Filed:

Mar. 16, 2023
Applicant:

Sensor Electronic Technology, Inc., Columbia, SC (US);

Inventors:

Rakesh B. Jain, Elgin, SC (US);

Mohamed Lachab, West Columbia, SC (US);

Joseph Dion, Columbia, SC (US);

Brandon Alexander Robinson, Columbia, SC (US);

Devendra Diwan, Columbia, SC (US);

Mark Geppert, Columbia, SC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10H 20/825 (2025.01); H10H 20/815 (2025.01); H10H 20/82 (2025.01);
U.S. Cl.
CPC ...
H10H 20/8252 (2025.01); H10H 20/815 (2025.01); H10H 20/82 (2025.01);
Abstract

A solution for fabricating a semiconductor structure and the corresponding semiconductor structure are provided. The semiconductor structure includes a plurality of semiconductor layers grown over a substrate using a set of epitaxial growth periods. During each epitaxial growth period, a first semiconductor layer having one of: a tensile stress or a compressive stress is grown followed by growth of a second semiconductor layer having the other of: the tensile stress or the compressive stress directly on the first semiconductor layer.


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