Columbia, SC, United States of America

Mark Geppert

This inventor holds 1 USPTO granted patent. Top assignee: Sensor Electronic Technology, Inc.. Active years: 2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Mark Geppert. Retrieved from https://idiyas.com/inventor/mark-geppert

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile


Average Co-Inventor Count = 1.0

ph-index = 1


Company Filing History:


Years Active: 2026

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1 patent (USPTO):Explore Patents

Title: Mark Geppert: Semiconductor Invention and Patent

Introduction

Mark Geppert is an inventor associated with Columbia, South Carolina, and Sensor Electronic Technology, Inc. His patent work addresses semiconductor structures and methods for reducing dislocations in semiconductor compounds.

Latest Patents

The provided information identifies one patent associated with Geppert: “Dislocation Reduction in Semiconductor Compounds.” The invention describes fabricating a semiconductor structure with multiple semiconductor layers grown over a substrate through successive epitaxial growth periods. In each period, a layer under tensile or compressive stress is grown, followed directly by a layer under the opposite type of stress. The alternating stresses are intended to reduce dislocations in the semiconductor structure. The supplied data lists 1 patent and does not specify its filing or grant date.

Career Highlights

Geppert’s listed patent reflects work on semiconductor fabrication and the engineering of layered materials. The provided information associates him with Sensor Electronic Technology, Inc.

Collaborations

The supplied data names Rakesh B. Jain and Mohamed Lachab as Geppert’s coworkers. Their inclusion indicates professional associations, but the information does not specify their roles in the patent.

Conclusion

Mark Geppert’s listed invention focuses on using alternating tensile and compressive stresses during epitaxial growth to reduce dislocations in semiconductor compounds.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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