The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Oct. 10, 2023

Filed:

Mar. 19, 2021
Applicant:

Sensor Electronic Technology, Inc., Columbia, SC (US);

Inventors:

Joseph Dion, Columbia, SC (US);

Devendra Diwan, Columbia, SC (US);

Brandon A Robinson, Columbia, SC (US);

Rakesh B Jain, Elgin, SC (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/00 (2010.01); H01L 33/32 (2010.01); H01L 33/10 (2010.01); H01L 33/06 (2010.01); H01L 33/04 (2010.01); H01L 33/14 (2010.01);
U.S. Cl.
CPC ...
H01L 33/0025 (2013.01); H01L 33/04 (2013.01); H01L 33/06 (2013.01); H01L 33/10 (2013.01); H01L 33/14 (2013.01); H01L 33/32 (2013.01);
Abstract

A heterostructure with reduced optical losses is disclosed. The heterostructure includes a set of n-type layers; an active region that generates radiation at a peak emitted wavelength; and a set of p-type layers located adjacent to the active region. A reflective structure can be located adjacent to the set of p-type layers. A thickness of the set of p-type layers can be configured to promote constructive interference of the reflected radiation with radiation emitted by the active region in a direction toward the set of n-type layers.


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