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For the Inventor, By the Inventor

San Jose, CA, United States of America

Qingjun Zhou

This inventor holds 21 USPTO granted patents and 4 published patent applications, primarily in Dielectric Etching. Top assignees: Applied Materials, Inc., Micro Materials Inc., Mirocmaterials LLC. Active years: 2010-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Qingjun Zhou. Retrieved from https://idiyas.com/inventor/qingjun-zhou

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank
USPTO Granted Patents = 21 

% Patents Active = 71.4

Average Co-Inventor Count = 4.5

ph-index = 6

Forward Citations = 586(Granted Patents)


Location History:

  • Sunnyvale, CA (US) (2010)
  • San Jose, CA (US) (2014 - 2022)

Company Filing History:

goldMedal17 out of 14,502 
 
Applied Materials, Inc.
 patents
silverMedal3 out of 27 
 
Micro Materials Inc.
 patents
bronzeMedal1 out of 2 
 
Mirocmaterials LLC
 patents

Years Active: 2010-2022

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Areas of Expertise:
Selective Etching
Low-k Dielectric
Self-Aligned Vias
Fin Structure Formation
Aluminum Oxide Etch
Cyclic Spacer Etching
Silicon Nitride Patterning
High Aspect Ratio Structures
Mask Scheme
Temperature Ramping
Dielectric Material Damage
Profile Control
21 patents (USPTO):Explore Patents
1. 11508618 - Multicolor self-aligned contact selective etch (2022-11-22),
2. 11302519 - Method of patterning a low-k dielectric film (2022-04-12),
3. 11094589 - Multicolor self-aligned contact selective etch (2021-08-17),
4. 10840138 - Selectively etched self-aligned via processes (2020-11-17),
5. 10770568 - Method to remove III-V materials in high aspect ratio structures (2020-09-08),
6. 10741393 - Methods for bottom up fin structure formation (2020-08-11),
7. 10692728 - Use of selective aluminum oxide etch (2020-06-23),
8. 10593594 - Selectively etched self-aligned via processes (2020-03-17),
9. 10510602 - Methods of producing self-aligned vias (2019-12-17),
10. 10510540 - Mask scheme for cut pattern flow with enlarged EPE window (2019-12-17),
11. 10439047 - Methods for etch mask and fin structure formation (2019-10-08),
12. 10204781 - Methods for bottom up fin structure formation (2019-02-12),
13. 9818621 - Cyclic oxide spacer etch process (2017-11-14),
14. 9721807 - Cyclic spacer etching process with improved profile control (2017-08-01),
15. 9478433 - Cyclic spacer etching process with improved profile control (2016-10-25),

Title: Innovator Spotlight: Qingjun Zhou - Pioneering Semiconductor Technologies

Introduction:

In the bustling tech hub of San Jose, CA, inventor Qingjun Zhou has been making waves with his groundbreaking work in semiconductor device technologies. With an impressive portfolio of 21 patents under his belt, Zhou's innovative contributions have significantly impacted the industry.

Latest Patents:

Among Zhou's latest patents is the 'Multicolor Self-Aligned Contact Selective Etch', which details methods for forming and processing semiconductor devices through selective etching of aluminum oxide. Another notable patent is the 'Method of Patterning a Low-k Dielectric Film', focusing on patterning low-k dielectric films using advanced plasma processes.

Career Highlights:

Zhou has made significant strides in his career, having worked with renowned companies such as Applied Materials, Inc. and Micro Materials Inc. His expertise in semiconductor technologies has led to the development of cutting-edge solutions in the field.

Collaborations:

Throughout his career, Zhou has collaborated with industry peers such as Ying Di Zhang and Yung-chen Lin. Together, they have worked on various projects, pushing the boundaries of innovation in semiconductor device manufacturing.

Conclusion:

Inventor Qingjun Zhou's remarkable journey in the world of semiconductor technologies is a testament to his passion for innovation and dedication to advancing the industry. His prolific contributions continue to shape the future of semiconductor devices, paving the way for new possibilities in technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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