The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 08, 2020
Filed:
Feb. 15, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Xinyu Bao, Fremont, CA (US);
Ying Zhang, Santa Clara, CA (US);
Qingjun Zhou, San Jose, CA (US);
YungChen Lin, Los Angeles, CA (US);
Applied Materials, Inc., Santa Clara, CA (US);
Abstract
Methods for forming semiconductor devices, such as FinFETs, are provided. In an embodiment, a fin structure processing method includes removing a portion of a first fin of a plurality of fins formed on a substrate to expose a surface of a remaining portion of the first fin, wherein the fins are adjacent to dielectric material structures formed on the substrate; performing a deposition operation to form features on the surface of the remaining portion of the first fin by depositing a Group III-V semiconductor material in a substrate processing environment; and performing an etching operation to etch the features with an etching gas to form a plurality of openings between adjacent dielectric material structures, wherein the etching operation is performed in the same chamber as the deposition operation.