The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Apr. 12, 2022

Filed:

Sep. 09, 2015
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Srinivas D. Nemani, Sunnyvale, CA (US);

Jeremiah T. Pender, San Jose, CA (US);

Qingjun Zhou, San Jose, CA (US);

Dmitry Lubomirsky, Cupertino, CA (US);

Sergey G. Belostotskiy, Sunnyvale, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01J 37/32 (2006.01); H01L 21/311 (2006.01); H01L 21/3105 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3244 (2013.01); H01J 37/32009 (2013.01); H01L 21/3105 (2013.01); H01L 21/31116 (2013.01); H01L 21/31138 (2013.01); H01L 21/02126 (2013.01);
Abstract

Methods of patterning low-k dielectric films are described. In an example, a method of patterning a low-k dielectric film involves forming and patterning a mask layer above a low-k dielectric layer, the low-k dielectric layer disposed above a substrate. The method also involves modifying exposed portions of the low-k dielectric layer with a nitrogen-free plasma process. The method also involves removing, with a remote plasma process, the modified portions of the low-k dielectric layer selective to the mask layer and unmodified portions of the low-k dielectric layer.


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