The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 17, 2019
Filed:
Jul. 12, 2018
Micromaterials Llc, Wilmington, DE (US);
Ying Zhang, Santa Clara, CA (US);
Qingjun Zhou, San Jose, CA (US);
Yung-Chen Lin, Gardena, CA (US);
Ho-yung David Hwang, Cupertino, CA (US);
MICROMATERIALS LLC, Wilmington, DE (US);
Abstract
Methods of forming semiconductor devices comprising etching a hardmask and spin-on-carbon layer through an opening in a photoresist to expose a gapfill material. The photoresist, spin-on-carbon layer and gapfill material are removed. A new spin-on-carbon layer, hardmask and photoresist are formed with an opening over a spacer mandrel. The hardmask, spin-on-carbon layer are etched through the opening and the layers and spacer mandrel are removed. An etch stop layer and oxide layer are removed and a height of the spacer mandrel and gapfill material are reduced exposing portions of the substrate. The exposed portions of the substrate are fin etched and the layers removed.