logo

For the Inventor, By the Inventor

Cupertino, CA, United States of America

Ho-yung David Hwang

This inventor holds 30 USPTO granted patents and 11 published patent applications, primarily in Semiconductor Processing. Top assignees: Applied Materials, Inc., Micro Materials Inc., Mirocmaterials LLC. Active years: 2019-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Ho-yung David Hwang. Retrieved from https://idiyas.com/inventor/ho-yung-david-hwang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 30 

% Patents Active = 70.0

Average Co-Inventor Count = 4.6

ph-index = 3

Forward Citations = 31(Granted Patents)


Company Filing History:

goldMedal18 out of 14,454 
 
Applied Materials, Inc.
 patents
silverMedal10 out of 27 
 
Micro Materials Inc.
 patents
bronzeMedal2 out of 2 
 
Mirocmaterials LLC
 patents

Years Active: 2019-2026

Loading Chart...
Areas of Expertise:
Ion Implantation
Electrode Tuning
Boron Films
Atomic Layer Etching
EUV Resist
Multicolor Patterning
DRAM Capacitor
Self-Aligned Vias
Subtractive Etch
Patterning Applications
Metal Oxide Photoresists
Interconnect Formation
30 patents (USPTO):Explore Patents
1. 12745578 - Ion implantation for increased adhesion with resist material (2026-09-22),
2. 12550647 - Electrode tuning, depositing, and etching methods (2026-02-10),
3. 12387927 - Deposition of boron films (2025-08-12),
4. 12327764 - Two-dimension self-aligned scheme with subtractive metal etch (2025-06-10),
5. 12272564 - Tin oxide and tin carbide materials for semiconductor patterning applications (2025-04-08),
6. 12020908 - Atomic layer etching of Ru metal (2024-06-25),
7. 11994800 - Dose reduction of patterned metal oxide photoresists (2024-05-28),
8. 11869807 - Fully self-aligned subtractive etch (2024-01-09),
9. 11638374 - Multicolor approach to DRAM STI active cut patterning (2023-04-25),
10. 11550222 - Dose reduction of patterned metal oxide photoresists (2023-01-10),
11. 11508618 - Multicolor self-aligned contact selective etch (2022-11-22),
12. 11508617 - Method of forming interconnect for semiconductor device (2022-11-22),
13. 11437274 - Fully self-aligned via (2022-09-06),
14. 11437238 - Patterning scheme to improve EUV resist and hard mask selectivity (2022-09-06),
15. 11335690 - Multicolor approach to DRAM STI active cut patterning (2022-05-17),

Title: The Innovative Journey of Ho-yung David Hwang

Introduction: Ho-yung David Hwang is a visionary inventor based in Cupertino, CA. His groundbreaking work has significantly impacted various industries and technologies.

Latest Patents: Ho-yung David Hwang holds several patents in the fields of technology and engineering, showcasing his continuous commitment to innovation and creativity.

Career Highlights: Throughout his illustrious career, Ho-yung David Hwang has been recognized for his exceptional problem-solving skills and forward-thinking approach. His contributions have led to advancements in cutting-edge technologies.

Collaborations: Ho-yung David Hwang has collaborated with leading experts and organizations in the industry, fostering a culture of innovation and knowledge-sharing that has propelled his work to new heights.

Conclusion: Ho-yung David Hwang's passion for innovation and relentless pursuit of excellence make him a true pioneer in the world of inventions, with a lasting impact on the technological landscape.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…