The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Sep. 22, 2026

Filed:

Aug. 11, 2023
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Lei Liao, San Jose, CA (US);

Yichuan Ling, Fremont, CA (US);

Zhiyu Huang, Sunnyvale, CA (US);

Hideyuki Kanzawa, Halfmoon, NY (US);

Fenglin Wang, Lexington, MA (US);

Rajesh Prasad, Lexington, MA (US);

Yung-Chen Lin, Gardena, CA (US);

Chi-I Lang, Cupertino, CA (US);

Ho-Yung David Hwang, Cupertino, CA (US);

Lequn Liu, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10P 14/00 (2026.01); H10P 14/69 (2026.01); H10P 14/692 (2026.01); H10P 30/40 (2026.01);
U.S. Cl.
CPC ...
H10P 30/40 (2026.01); H10P 14/6905 (2026.01); H10P 14/69215 (2026.01); H10P 14/6927 (2026.01);
Abstract

Exemplary methods of semiconductor processing may include forming a layer of silicon-containing material on a semiconductor substrate. The methods may include performing a post-formation treatment on the layer of silicon-containing material to yield a treated layer of silicon-containing material. The methods may include contacting the treated layer of silicon-containing material with an adhesion agent. The methods may include forming a layer of a resist material on the treated layer of silicon-containing material.


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