The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Mar. 12, 2019
Applicant:
Applied Materials, Inc., Santa Clara, CA (US);
Inventors:
Yung-Chen Lin, Gardena, CA (US);
Qingjun Zhou, San Jose, CA (US);
Ying Zhang, Santa Clara, CA (US);
Ho-yung David Hwang, Cupertino, CA (US);
Assignee:
Applied Materials, Inc., Santa Clara, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/768 (2006.01); H01L 21/027 (2006.01); H01L 21/033 (2006.01);
U.S. Cl.
CPC ...
H01L 21/76897 (2013.01); H01L 21/0274 (2013.01); H01L 21/0337 (2013.01); H01L 21/76814 (2013.01); H01L 21/76834 (2013.01);
Abstract
Methods of forming and processing semiconductor devices which utilize the selective etching of aluminum oxide over silicon oxide, silicon nitride, aluminum oxide or zirconium oxide are described. Certain embodiments relate to the formation of self-aligned contacts for metal gate applications.