Leuven, Belgium

Qi Xie

This inventor holds 87 USPTO granted patents and 26 published patent applications, primarily in Semiconductor Materials (CPC class H01L21-0228). Top assignees: Asm IP Holding B.v., Asm IP Holdings B.v.. Active years: 2015-2026.

USPTO Granted Patents = 87 

% Patents Active = 100.0

Average Co-Inventor Count = 4.8

ph-index = 18

Forward Citations = 4,856(Granted Patents)

Forward Citations (Not Self Cited) = 4,298(Dec 10, 2025)


Inventors with similar research interests:

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Location History:

  • Almere, NL (2015)
  • Lueven, BE (2018)
  • Leuven, BE (2015 - 2022)
  • Wilsele, BE (2022 - 2024)

Company Filing History:


Years Active: 2015-2026

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Areas of Expertise:
Vanadium Nitride
Molybdenum Films
Silicon Germanium
Doped Semiconductor
Layer Deposition
Oxides and Nitrides
Threshold Voltage Control
Gap Filling
Metal Silicate
Cyclical Deposition
Semiconductor Structures
Vanadium Compounds
87 patents (USPTO):Explore Patents

Title: Qi Xie: A Brillant Innovator in Semiconductor Technologies

Introduction:

In the world of semiconductor technologies, there are few individuals as accomplished as Qi Xie. With a remarkable number of patents to his name and an undeniable talent for devising cutting-edge solutions, Qi Xie has made significant contributions to the field. Let's delve into his latest patents, career highlights, and notable collaborations.

Latest Patents:

Qi Xie's latest patents showcase his expertise in deposition processes and the formation of vanadium nitride layers. In his patent titled "Methods and Systems for Depositing a Layer Comprising Vanadium, Nitrogen, and a Further Element," Qi Xie introduces innovative methods and systems for depositing layers containing vanadium, nitrogen, and other elements like molybdenum, tantalum, niobium, aluminum, and silicon. These layers find applications in various structures, including field effect transistors, VNAND cells, metal-insulator-metal (MIM) structures, and DRAM capacitors.

Additionally, Qi Xie's patent on the "Method of Forming Vanadium Nitride Layer and Structure Including the Vanadium Nitride Layer" presents techniques for deposition of vanadium nitride layers, employing a cyclical deposition process. The method involves using a vanadium halide precursor and a separate nitrogen reactant. The resulting vanadium nitride layer can be utilized in the creation of advanced structures and devices.

Career Highlights:

Qi Xie's remarkable career has seen him shine in companies like ASM IP Holding B.V. and ASM IP Holdings B.V. These organizations are renowned for their expertise in semiconductor technologies, and Qi Xie's contributions have undoubtedly played a pivotal role in their success. With a total of 60 patents credited to his name, his innovative spirit and technical acumen have significantly impacted the industry.

Collaborations:

Throughout his career, Qi Xie has had the privilege of working alongside esteemed colleagues such as Jan Willem Maes and Michael Eugene Givens. Their combined expertise and collaborative efforts have resulted in remarkable advancements in the field of semiconductor technologies. These collaborations exemplify the power of teamwork and the shared pursuit of innovation.

Conclusion:

Qi Xie's multitude of patents and impact in the field of semiconductor technologies make him a standout figure in the industry. His latest patents reveal his proficiency in deposition methods and the creation of vanadium nitride layers, which are crucial elements in cutting-edge semiconductor devices. Combined with his notable contributions to prominent companies and collaborations with esteemed colleagues, Qi Xie's work has left an indelible mark in the world of innovations and patents.

Profile summary based on public USPTO records.
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