The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 02, 2025
Filed:
May. 21, 2021
Applicant:
Asm Ip Holding B.v., Almere, NL;
Inventors:
Lucas Petersen Barbosa Lima, Heverlee, BE;
Joe Margetis, Gilbert, AZ (US);
John Tolle, Gilbert, AZ (US);
Rami Khazaka, Leuven, BE;
Qi Xie, Wilsele, BE;
Assignee:
ASM IP Holding B.V., Almere, NL;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C30B 25/04 (2006.01); C30B 25/18 (2006.01); C30B 29/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02579 (2013.01); C30B 25/04 (2013.01); C30B 25/18 (2013.01); C30B 29/52 (2013.01); H01L 21/02532 (2013.01); H01L 21/0262 (2013.01); H01L 21/02636 (2013.01); H01L 21/02381 (2013.01); H01L 21/02642 (2013.01);
Abstract
Methods and devices for epitaxially growing boron- and gallium-doped silicon germanium layers. The layers may be used, for example, as a p-type source and/or drain regions in field effect transistors.