The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Mar. 10, 2026

Filed:

Apr. 28, 2023
Applicant:

Asm Ip Holding B.v., Almere, NL;

Inventors:

Eric James Shero, Phoenix, AZ (US);

Charles Dezelah, Helsinki, FI;

Ren-Jie Chang, Leuven, BE;

Qi Xie, Wilsele, BE;

Perttu Sippola, Tempe, AZ (US);

Petri Raisanen, Gilbert, AZ (US);

Assignee:

ASM IP Holding B.V., Almere, NL;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/40 (2006.01); C23C 16/04 (2006.01); C23C 16/44 (2006.01); C23C 16/455 (2006.01); H01L 21/02 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
C23C 16/405 (2013.01); C23C 16/045 (2013.01); C23C 16/4408 (2013.01); C23C 16/45553 (2013.01); H01L 21/02175 (2013.01); H01L 21/02205 (2013.01); H01L 21/0228 (2013.01); H01L 21/76831 (2013.01);
Abstract

Vapor deposition methods and related systems are provided for depositing layers comprising vanadium and oxygen. In some embodiments, the methods comprise contacting a substrate in a reaction space with alternating pulses of a vapor-phase vanadium precursor and a vapor-phase oxygen reactant. The reaction space may be purged, for example, with an inert gas, between reactant pulses. The methods may be used to fill a gap on a substrate surface. Reaction conditions, including deposition temperature and reactant pulse and purge times may be selected to achieve advantageous gap fill properties. In some embodiments, the substrate on which deposition takes place is maintained at a relatively low temperature, for example between about 50° C. and about 185° C.


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