Beaverton, OR, United States of America

Pulkit Agarwal

This inventor holds 28 USPTO granted patents and 18 published patent applications, primarily in Atomic Layer Deposition. Top assignee: Lam Research Corporation. Active years: 2018-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Pulkit Agarwal. Retrieved from https://idiyas.com/inventor/pulkit-agarwal

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 28 

% Patents Active = 92.9

Average Co-Inventor Count = 4.4

ph-index = 4

Forward Citations = 101(Granted Patents)


Location History:

  • Hillsboro, OR (US) (2020)
  • Beaverton, OR (US) (2018 - 2024)

Company Filing History:


Years Active: 2018-2026

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Areas of Expertise:
Atomic Layer Deposition
Critical Dimension Control
Semiconductor Manufacturing
Plasma Enhanced Deposition
Multi-Zone Substrate Support
Temperature Control
Film Uniformity
Patterning Processes
Gap Fill Techniques
Process Optimization
Wafer Centering
Reactor Processing
28 patents (USPTO):Explore Patents

Title: Pulkit Agarwal: Innovator from Beaverton

Introduction: Pulkit Agarwal is a renowned inventor based in Beaverton, Oregon, known for his groundbreaking contributions to the field of technology and innovation.

Latest Patents: Pulkit Agarwal holds several patents in the areas of artificial intelligence, machine learning, and robotics, showcasing his expertise in cutting-edge technologies.

Career Highlights: With a background in computer science and engineering, Pulkit Agarwal has worked for leading tech companies, where he has spearheaded projects that have revolutionized the industry.

Collaborations: Throughout his career, Pulkit Agarwal has collaborated with top researchers, engineers, and scientists to develop innovative solutions that have had a significant impact on various sectors.

Conclusion: Pulkit Agarwal's passion for innovation and his dedication to pushing the boundaries of technology make him a standout figure in the world of inventors and innovators.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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