The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 21, 2025
Filed:
Jun. 07, 2024
Applicant:
Lam Research Corporation, Fremont, CA (US);
Inventors:
Chan Myae Myae Soe, Santa Clara, CA (US);
Chloe Baldasseroni, Portland, OR (US);
Shiva Sharan Bhandari, Sherwood, OR (US);
Pulkit Agarwal, Beaverton, OR (US);
Adrien Lavoie, Newberg, OR (US);
Bart J. Van Schravendijk, Palo Alto, CA (US);
Assignee:
Lam Research Corporation, Fremont, CA (US);
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 16/40 (2006.01); C23C 16/455 (2006.01); C23C 16/52 (2006.01);
U.S. Cl.
CPC ...
H01L 21/0228 (2013.01); C23C 16/401 (2013.01); C23C 16/45536 (2013.01); C23C 16/45544 (2013.01); C23C 16/52 (2013.01); H01L 21/02164 (2013.01); H01L 21/02211 (2013.01); H01L 21/02274 (2013.01);
Abstract
Methods and apparatuses for depositing thin films using long and short conversion times during alternating cycles of atomic layer deposition (ALD) are provided herein. Embodiments involve alternating conversion duration of an ALD cycle in one or more cycles of a multi-cycle ALD process. Some embodiments involve modulation of dose, purge, pressure, plasma power or plasma energy in two or more ALD cycles.