The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 27, 2024

Filed:

Aug. 22, 2018
Applicant:

Lam Research Corporation, Fremont, CA (US);

Inventors:

Pulkit Agarwal, Beaverton, OR (US);

Adrien Lavoie, Newberg, OR (US);

Purushottam Kumar, Hillsboro, OR (US);

Assignee:

LAM RESEARCH CORPORATION, Fremont, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/455 (2006.01); H01L 21/02 (2006.01); C23C 16/44 (2006.01);
U.S. Cl.
CPC ...
C23C 16/45536 (2013.01); C23C 16/4408 (2013.01); C23C 16/45519 (2013.01); C23C 16/45565 (2013.01); C23C 16/45574 (2013.01); H01L 21/0228 (2013.01);
Abstract

A method for processing a substrate is provided, wherein the substrate is located below a showerhead in a processing chamber. A deposition layer is deposited on the substrate, wherein at least one deposition gas is provided through the showerhead. A secondary purge gas is flowed during the depositing the deposition layer from a location outside of the showerhead in the processing chamber forming a flow curtain around an outer edge of the showerhead, wherein the secondary purge gas comprises at least one component gas. A partial pressure of the at least one component gas is changed over time during the depositing the deposition layer, wherein the depositing the deposition layer has a non-uniformity, wherein the changing the partial pressure changes the non-uniformity over time during the depositing the deposition layer.


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