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Essex Junction, VT, United States of America

Peter James Lindgren

This inventor holds 34 USPTO granted patents and 1 published patent application and 2 EPO patents, primarily in Semiconductor Fabrication. Top assignees: International Business Machines Corporation, Globalfoundries U.S. 2 LLC, Ultratech, Inc.. Active years: 2002-2015.

USPTO Granted Patents = 34 (Patent Applications = 1)

% Patents Active = 52.9

EPO Patents = 2

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 184(Granted Patents)

Location History:

Burlington, VT (US) (2002 - 2010)
Essex Junction, VT (US) (2004 - 2015)

Company Filing History:

32 out of 166,159

International Business Machines Corporation

Globalfoundries U.S. 2 LLC

Ultratech, Inc.

Years Active: 2002-2015

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Areas of Expertise:

Dual-Damascene Process

RF Switch

High-Density Capacitors

Through Silicon Vias

Inductor Design

Metal Wiring Structure

Silicided Trench Contact

Substrate Via

Lithographic Alignment

Microtrenching

Dishing Correction

Cobalt Disilicide

34 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9171778 - Dual-damascene process to fabricate thick wire structure (2015-10-27),

2. 8872281 - Silicided trench contact to buried conductive layer (2014-10-28),

3. 8753950 - Dual-damascene process to fabricate thick wire structure (2014-06-17),

4. 8748207 - Hybrid MEMS RF switch and method of fabricating same (2014-06-10),

5. 8722508 - Low harmonic RF switch in SOI (2014-05-13),

6. 8674472 - Low harmonic RF switch in SOI (2014-03-18),

7. 8674423 - Semiconductor structure having vias and high density capacitors (2014-03-18),

8. 8645898 - Structure and design structure for high-Q value inductor and method of manufacturing the same (2014-02-04),

9. 8643190 - Through substrate via including variable sidewall profile (2014-02-04),

10. 8631570 - Through wafer vias with dishing correction methods (2014-01-21),

11. 8445306 - Hybrid MEMS RF switch and method of fabricating same (2013-05-21),

12. 8338265 - Silicided trench contact to buried conductive layer (2012-12-25),

13. 8293638 - Method of fabricating damascene structures (2012-10-23),

14. 8236663 - Dual-damascene process to fabricate thick wire structure (2012-08-07),

15. 8234606 - Metal wiring structure for integration with through substrate vias (2012-07-31),

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