Essex Junction, VT, United States of America

Peter James Lindgren

USPTO Granted Patents = 34 (Patent Applications = 1)

EPO Patents = 2

Average Co-Inventor Count = 3.9

ph-index = 6

Forward Citations = 182(Granted Patents)

Location History:

Burlington, VT (US) (2002 - 2010)
Essex Junction, VT (US) (2004 - 2015)

Company Filing History:

32 out of 164,108

International Business Machines Corporation

patents

1 out of 59

Globalfoundries U.S. 2 LLC

Years Active: 2002-2015

where 'Filed Patents' based on already Granted Patents

34 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 9171778 - Dual-damascene process to fabricate thick wire structure (2015-10-27),

2. 8872281 - Silicided trench contact to buried conductive layer (2014-10-28),

3. 8753950 - Dual-damascene process to fabricate thick wire structure (2014-06-17),

4. 8748207 - Hybrid MEMS RF switch and method of fabricating same (2014-06-10),

5. 8722508 - Low harmonic RF switch in SOI (2014-05-13),

6. 8674472 - Low harmonic RF switch in SOI (2014-03-18),

7. 8674423 - Semiconductor structure having vias and high density capacitors (2014-03-18),

8. 8645898 - Structure and design structure for high-Q value inductor and method of manufacturing the same (2014-02-04),

9. 8643190 - Through substrate via including variable sidewall profile (2014-02-04),

10. 8631570 - Through wafer vias with dishing correction methods (2014-01-21),

11. 8445306 - Hybrid MEMS RF switch and method of fabricating same (2013-05-21),

12. 8338265 - Silicided trench contact to buried conductive layer (2012-12-25),

13. 8293638 - Method of fabricating damascene structures (2012-10-23),

14. 8236663 - Dual-damascene process to fabricate thick wire structure (2012-08-07),

15. 8234606 - Metal wiring structure for integration with through substrate vias (2012-07-31),

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1 patent pending:

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2 patents (EPO):

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