The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 25, 2012
Filed:
Nov. 12, 2008
Douglas D. Coolbaugh, Highland, NY (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Peter J. Lindgren, Essex Junction, VT (US);
Xuefeng Liu, South Burlington, VT (US);
James S. Nakos, Essex Junction, VT (US);
Bradley A. Orner, Fairfax, VT (US);
Robert M. Rassel, Colchester, VT (US);
David C. Sheridan, Starkville, MS (US);
Douglas D. Coolbaugh, Highland, NY (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Peter J. Lindgren, Essex Junction, VT (US);
Xuefeng Liu, South Burlington, VT (US);
James S. Nakos, Essex Junction, VT (US);
Bradley A. Orner, Fairfax, VT (US);
Robert M. Rassel, Colchester, VT (US);
David C. Sheridan, Starkville, MS (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A trench contact silicide is formed on an inner wall of a contact trench that reaches to a buried conductive layer in a semiconductor substrate to reduce parasitic resistance of a reachthrough structure. The trench contact silicide is formed at the bottom, on the sidewalls of the trench, and on a portion of the top surface of the semiconductor substrate. The trench is subsequently filled with a middle-of-line (MOL) dielectric. A contact via may be formed on the trench contact silicide. The trench contact silicide may be formed through a single silicidation reaction with a metal layer or through multiple silicidation reactions with multiple metal layers.