EPO Patents = 1

Average Co-Inventor Count = 3.8

ph-index = 7

Forward Citations = 137(Granted Patents)

Location History:

South Burlington, VT (US) (2003 - 2007)
Williston, VT (US) (2007 - 2012)
Starkville, MS (US) (2010 - 2014)

Company Filing History:

22 out of 164,108

International Business Machines Corporation

patents

5 out of 1,016

Power Integrations, Inc.

patents

2 out of 23

Semisouth Laboratories, Inc.

Years Active: 2003-2014

where 'Filed Patents' based on already Granted Patents

33 patents (USPTO):Sort by Forward Citations

Abstract keywords

1. 8884270 - Vertical junction field effect transistors with improved thermal characteristics and methods of making (2014-11-11),

2. 8872281 - Silicided trench contact to buried conductive layer (2014-10-28),

3. 8659057 - Self-aligned semiconductor devices with reduced gate-source leakage under reverse bias and methods of making (2014-02-25),

4. 8513675 - Vertical junction field effect transistors having sloped sidewalls and methods of making (2013-08-20),

5. 8507335 - Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making (2013-08-13),

6. 8466017 - Methods of making semiconductor devices having implanted sidewalls and devices made thereby (2013-06-18),

7. 8338265 - Silicided trench contact to buried conductive layer (2012-12-25),

8. 8288244 - Lateral passive device having dual annular electrodes (2012-10-16),

9. 8202772 - Vertical junction field effect transistors having sloped sidewalls and methods of making (2012-06-19),

10. 8163612 - Silicon germanium heterostructure barrier varactor (2012-04-24),

11. 8105924 - Deep trench based far subcollector reachthrough (2012-01-31),

12. 8058655 - Vertical junction field effect transistors having sloped sidewalls and methods of making (2011-11-15),

13. 8030167 - Varied impurity profile region formation for varying breakdown voltage of devices (2011-10-04),

14. 8015538 - Design structure with a deep sub-collector, a reach-through structure and trench isolation (2011-09-06),

15. 7994548 - Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making (2011-08-09),

Title: Innovations and Contributions of David Charles Sheridan in Semiconductor Technologies

Introduction: David Charles Sheridan, based in Williston, Vermont, is a prolific inventor with a remarkable record of 33 patents. His expertise lies in the field of semiconductor technology, where his innovations focus on enhancing the performance of electronic devices. His contributions have had a significant impact on thermal management and resistance reduction in transistors, vital aspects for advancing electronics.

Latest Patents: One of his latest patents includes innovations in Vertical Junction Field Effect Transistors (VJFETs) with improved thermal characteristics. These devices are designed to enhance heat dissipation at high current flow, while effectively maintaining specific on-resistance and normalized saturated drain current properties, both hallmarks of high-performance devices. The design features both electrically active and inactive source regions, the latter aiding in heat dissipation during operation.

Additionally, Sheridan has worked on a patent regarding silicided trench contact to buried conductive layers. This innovative approach involves forming a trench contact silicide on an inner wall of a trench reaching to a buried conductive layer in a semiconductor substrate. This design effectively reduces parasitic resistance, a critical improvement for semiconductor performance.

Career Highlights: David Charles Sheridan has worked with notable companies in the tech industry, including International Business Machines Corporation (IBM) and Power Integrations, Inc. His tenure at these organizations has allowed him to apply his innovative ideas in practical settings, contributing to significant advancements in semiconductor technologies.

Collaborations: Throughout his career, Sheridan has collaborated with accomplished individuals, including Robert Mark Rassel and Douglas Duane Coolbaugh. These partnerships have likely spurred many innovative ideas and pushed the boundaries of what is possible in the realm of semiconductor development.

Conclusion: David Charles Sheridan is a distinguished inventor whose contributions are vital to the evolution of semiconductor technologies. His innovative patents in vertical junction transistors and trench contact silicides showcase his commitment to improving electronic performance. Through his career and collaborations, Sheridan continues to illuminate the field of technology with groundbreaking inventions that pave the way for future advancements.

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1 patent (EPO):

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Inventor’s Patent Attorneys refers to legal professionals with specialized expertise in representing inventors throughout the patent process. These attorneys assist inventors in navigating the complexities of patent law, including filing patent applications, conducting patent searches, and protecting intellectual property rights. They play a crucial role in helping inventors secure patents for their innovative creations.