The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 11, 2014
Filed:
Mar. 30, 2012
Janna Casady, Starkville, MS (US);
Jeffrey Casady, Starkville, MS (US);
Kiran Chatty, Oviedo, FL (US);
David Sheridan, Starkville, MS (US);
Andrew Ritenour, Colfax, NC (US);
Janna Casady, Starkville, MS (US);
Jeffrey Casady, Starkville, MS (US);
Kiran Chatty, Oviedo, FL (US);
David Sheridan, Starkville, MS (US);
Andrew Ritenour, Colfax, NC (US);
Power Integrations, Inc., San Jose, CA (US);
Abstract
Vertical junction field effect transistors (VJFETs) having improved heat dissipation at high current flow while maintaining the desirable specific on-resistance and normalized saturated drain current properties characteristic of devices having small pitch lengths are described. The VJFETs comprise one or more electrically active source regions in electrical contact with the source metal of the device and one or more electrically inactive source regions not in electrical contact with the source metal of the device. The electrically inactive source regions dissipate heat generated by the electrically active source regions during current flow.