Kiran V Chatty

This inventor holds 68 USPTO granted patents and 3 published patent applications, plus 1 CIPO patent and 4 EPO patents, primarily in Semiconductor Devices (CPC class H01L). Top assignees: International Business Machines Corporation, Monolith Semiconductor, Inc., Globalfoundries Inc.. Active years: 2004-2022.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Kiran V Chatty. Retrieved from https://idiyas.com/inventor/kiran-v-chatty

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 68 (Patent Applications = 3)

% Patents Active = 50.0

CIPO Patents = 1

EPO Patents = 4 (Patent Applications = 2)

Average Co-Inventor Count = 4.7

ph-index = 9

Forward Citations = 671(Granted Patents)

Forward Citations (Not Self Cited) = 636(Dec 10, 2025)

Inventors with similar research interests:

Location History:

Essex Junction, VT (US) (2011 - 2012)
Starkville, MS (US) (2012)
Williston, VT (US) (2004 - 2014)
Oviedo, FL (US) (2013 - 2018)
Round Rock, TX (US) (2015 - 2022)

Company Filing History:

45 out of 166,351

International Business Machines Corporation

patents

19 out of 19

Monolith Semiconductor, Inc.

Infineon Technologies Ag

patents

5. 1 out of 1,029

Power Integrations, Inc.

patents

6. 1 out of 132,108

Samsung Electronics Co., Ltd.

patents

where one patent can have more than one assignee

Years Active: 2004-2022

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Areas of Expertise:

Semiconductor Devices

MOSFET

Getter Layers

Silicon Controlled Rectifiers

Electrostatic Discharge

High Voltage

Field Effect Transistors

Thermal Characteristics

Electrical Overstress

Triple Well CMOS

Low Leakage

Power Clamp

68 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 11315845 - Semiconductor devices comprising getter layers and methods of making and using the same (2022-04-26),

2. 11309414 - Metal oxide semiconductor (MOS) controlled devices and methods of making the same (2022-04-19),

3. 10910501 - Stucture and method for SIC based protection device (2021-02-02),

4. 10804175 - Semiconductor devices comprising getter layers and methods of making and using the same (2020-10-13),

5. 10692999 - High voltage MOSFET devices and methods of making the devices (2020-06-23),

6. 10622472 - Metal oxide semiconductor (MOS) controlled devices and methods of making the same (2020-04-14),

7. 10361302 - High voltage MOSFET devices and methods of making the devices (2019-07-23),

8. 10361296 - Metal oxide semiconductor (MOS) controlled devices and methods of making the same (2019-07-23),

9. 10290732 - High voltage semiconductor devices and methods of making the devices (2019-05-14),

10. 10163892 - Silicon controlled rectifiers (SCR), methods of manufacture and design structures (2018-12-25),

11. 10062749 - High voltage semiconductor devices and methods of making the devices (2018-08-28),

12. 9991376 - High voltage MOSFET devices and methods of making the devices (2018-06-05),

13. 9876104 - High voltage semiconductor devices and methods of making the devices (2018-01-23),

14. 9853147 - High voltage MOSFET devices and methods of making the devices (2017-12-26),

15. 9620428 - Semiconductor devices comprising getter layers and methods of making and using the same (2017-04-11),

Title: **Kiran V Chatty: Innovator in Semiconductor Technology**

Introduction

Kiran V Chatty, based in Williston, Vermont, is a prolific inventor with an impressive portfolio of 68 patents. His work focuses primarily on advancements in semiconductor technology, which have significantly contributed to the industry.

Latest Patents

Chatty's latest innovations include several groundbreaking patents. One key patent describes semiconductor devices comprising getter layers and methods for their production and application. This technology details the placement of a getter material, which can be either conductive or insulating, within the device’s active or termination regions. Notably, these inventions pertain to Silicon Carbide (SiC) semiconductor devices such as SiC vertical MOSFETs.

Another significant area of his recent work involves metal oxide semiconductor (MOS) controlled devices. His patents outline the construction of devices featuring a gate that manages current flow through the channel regions situated between source/emitter and drain regions. Furthermore, the gate oxide layer in these devices has a variable thickness, optimizing performance and enhancing oxide growth during gate oxide formation. These innovations are particularly relevant to SiC MOSFETs and IGBTs.

Career Highlights

Throughout his career, Kiran V Chatty has made notable contributions to the semiconductor field. He has worked with prominent companies, including the International Business Machines Corporation (IBM) and Monolith Semiconductor, Inc. His experience in these organizations has shaped his innovative approach and understanding of semiconductor technologies.

Collaborations

Chatty's contributions have been bolstered by collaborations with talented individuals like Robert J. Gauthier, Jr. and William R. Tonti. Their collective expertise has enriched the development of cutting-edge semiconductor technologies and advanced research initiatives.

Conclusion

Kiran V Chatty's extensive list of patents and innovative projects underscores his status as a key player in the semiconductor industry. With ongoing advancements in semiconductor devices, Chatty continues to leave a lasting impact on technology and engineering practices. His work promises to pave the way for future innovations in semiconductor solutions.

Profile summary based on public USPTO records.