The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 04, 2011
Filed:
Aug. 15, 2007
Douglas D. Coolbaugh, Essex Junction, VT (US);
Louis D. Lanzerotti, Charlotte, VT (US);
Bradley A. Orner, Fiarfax, VT (US);
Jay S. Rascoe, Undehill, VT (US);
David C. Sheridan, Williston, VT (US);
Stephen A. St. Onge, Colchester, VT (US);
Douglas D. Coolbaugh, Essex Junction, VT (US);
Louis D. Lanzerotti, Charlotte, VT (US);
Bradley A. Orner, Fiarfax, VT (US);
Jay S. Rascoe, Undehill, VT (US);
David C. Sheridan, Williston, VT (US);
Stephen A. St. Onge, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
Methods are disclosed for forming a varied impurity profile for a collector using scattered ions while simultaneously forming a subcollector. In one embodiment, the invention includes: providing a substrate; forming a mask layer on the substrate including a first opening having a first dimension; and substantially simultaneously forming through the first opening a first impurity region at a first depth in the substrate (subcollector) and a second impurity region at a second depth different than the first depth in the substrate. The breakdown voltage of a device can be controlled by the size of the first dimension, i.e., the distance of first opening to an active region of the device. Numerous different sized openings can be used to provide devices with different breakdown voltages using a single mask and single implant. A semiconductor device is also disclosed.