Bradley Alan Orner

This inventor holds 25 USPTO granted patents and 3 published patent applications, primarily in Silicon Germanium Technology. Top assignee: International Business Machines Corporation. Active years: 2005-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Bradley Alan Orner. Retrieved from https://idiyas.com/inventor/bradley-alan-orner

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 25 (Patent Applications = 3)

% Patents Active = 44.0

Average Co-Inventor Count = 4.6

ph-index = 5

Forward Citations = 81(Granted Patents)

Location History:

Fiarfax, VT (US) (2011)
Cambridge, VT (US) (2010 - 2013)
Colchester, VT (US) (2005 - 2014)
Fairfax, VT (US) (2008 - 2015)

Company Filing History:

25 out of 166,409

International Business Machines Corporation

patents

Years Active: 2005-2015

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Areas of Expertise:

Silicon Germanium

Heterojunction Bipolar Transistor

Schottky Barrier Diodes

Radio Frequency Integrated Circuit

Bipolar Transistor

Epitaxial Growth

Millimeter Wave

Dual Annular Electrodes

Trench Contact

Capacitor

Breakdown Voltage

CMOS Integration

25 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 8987067 - Segmented guard ring structures with electrically insulated gap structures and design structures thereof (2015-03-24),

2. 8853043 - Silicon germanium (SiGe) heterojunction bipolar transistor (HBT) (2014-10-07),

3. 8592293 - Schottky barrier diodes for millimeter wave SiGe BiCMOS applications (2013-11-26),

4. 8525293 - Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration (2013-09-03),

5. 8421478 - Radio frequency integrated circuit with on-chip noise source for self-test (2013-04-16),

6. 8338265 - Silicided trench contact to buried conductive layer (2012-12-25),

7. 8299500 - Silicon germanium heterojunction bipolar transistor having interstitial trapping layer in base region (2012-10-30),

8. 8288244 - Lateral passive device having dual annular electrodes (2012-10-16),

9. 8236662 - Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration (2012-08-07),

10. 8217497 - FIN differential MOS varactor diode (2012-07-10),

11. 8105924 - Deep trench based far subcollector reachthrough (2012-01-31),

12. 8030167 - Varied impurity profile region formation for varying breakdown voltage of devices (2011-10-04),

13. 7936041 - Schottky barrier diodes for millimeter wave SiGe BICMOS applications (2011-05-03),

14. 7892910 - Bipolar transistor with raised extrinsic self-aligned base using selective epitaxial growth for BiCMOS integration (2011-02-22),

15. 7888745 - Bipolar transistor with dual shallow trench isolation and low base resistance (2011-02-15),

As an AI Assistant specialized in innovations, inventions, inventors, patent attorneys, assignees, and patents, I will gladly assist you in creating an article about the accomplished inventor Bradley Alan Orner.

Title: The Inventive Journey of Bradley Alan Orner

Introduction:

Bradley Alan Orner, a distinguished inventor based in Fairfax, VT (US), has left a notable mark in the world of technology with his innovative patents and developments. His relentless dedication to advancing the field of semiconductor devices has led to the creation of numerous groundbreaking solutions.

Latest Patents:

Among his impressive portfolio of 25 patents, Bradley Alan Orner's recent inventions showcase his ingenuity and expertise. One of his latest patents includes "Segmented guard ring structures with electrically insulated gap structures and design structures thereof," revolutionizing integrated circuit chip design for enhanced performance and functionality. Additionally, his patent on "Silicon germanium (SiGe) heterojunction bipolar transistor (HBT)" highlights his proficiency in creating cutting-edge semiconductor technologies.

Career Highlights:

Bradley Alan Orner's exemplary career is deeply intertwined with the renowned International Business Machines Corporation (IBM), where he channels his inventive spirit to drive technological advancements. With a strong background in semiconductor physics and device engineering, he has played a vital role in shaping the future of semiconductor technologies.

Collaborations:

Collaborating with esteemed colleagues such as Robert Mark Rassel and David Charles Sheridan, Bradley Alan Orner has synergized his expertise with fellow visionaries in the field. Together, they have contributed to innovative projects and shared their collective knowledge to push the boundaries of technological innovation.

Conclusion:

In conclusion, Bradley Alan Orner stands as a trailblazer in the realm of semiconductor devices, with a remarkable track record of patented inventions and collaborations. His passion for innovation, coupled with his technical acumen, continues to inspire advancements in the field, making him a respected figure in the world of technology.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

3 patents pending: