The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 03, 2011
Filed:
Sep. 12, 2007
Jeffrey B. Johnson, Essex Junction, VT (US);
Xuefeng Liu, South Burlington, VT (US);
Bradley A. Orner, Fairfax, VT (US);
Robert M. Rassel, Colchester, VT (US);
Jeffrey B. Johnson, Essex Junction, VT (US);
Xuefeng Liu, South Burlington, VT (US);
Bradley A. Orner, Fairfax, VT (US);
Robert M. Rassel, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The structure for millimeter-wave frequency applications, includes a Schottky barrier diode (SBD) with a cutoff frequency (F) above 1.0 THz formed on a SiGe BiCMOS wafer. A method is also contemplated for forming a Schottky barrier diode on a SiGe BiCMOS wafer, including forming a structure which provides a cutoff frequency (F) above about 1.0 THz. In embodiments, the structure which provides a cutoff frequency (F) above about 1.0 THz may include an anode having an anode area which provides a cutoff frequency (F) above about 1.0 THz, an n-epitaxial layer having a thickness which provides a cutoff frequency (F) above about 1.0 THz, a p-type guardring at an energy and dosage which provides a cutoff frequency (F) above about 1.0 THz, the p-type guardring having a dimension which provides a cutoff frequency (F) above about 1.0 THz, and a well tailor with an n-type dopant which provides a cutoff frequency (F) above about 1.0 THz.