The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 30, 2012
Filed:
Aug. 23, 2005
Wade J. Hodge, Bolton, VT (US);
Alvin J. Joseph, Williston, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
Qizhi Liu, Essex Junction, VT (US);
Bradley A. Orner, Colchester, VT (US);
Wade J. Hodge, Bolton, VT (US);
Alvin J. Joseph, Williston, VT (US);
Rajendran Krishnasamy, Essex Junction, VT (US);
Qizhi Liu, Essex Junction, VT (US);
Bradley A. Orner, Colchester, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
A heterojunction bipolar transistor (HBT), an integrated circuit (IC) chip including at least one HBT and a method of forming the IC. The HBT includes an extrinsic base with one or more buried interstitial barrier layer. The extrinsic base may be heavily doped with boron and each buried interstitial barrier layer is doped with a dopant containing carbon, e.g., carbon or SiGe:C. The surface of the extrinsic base may be silicided.