The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 10, 2012

Filed:

Jan. 17, 2007
Applicants:

Bradley A. Orner, Cambridge, VT (US);

Edward J. Nowak, Essex Junction, VT (US);

Robert M. Rassel, Colchester, VT (US);

Inventors:

Bradley A. Orner, Cambridge, VT (US);

Edward J. Nowak, Essex Junction, VT (US);

Robert M. Rassel, Colchester, VT (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/93 (2006.01);
U.S. Cl.
CPC ...
Abstract

The embodiments of the invention provide a structure, method, etc. for a fin differential MOS varactor diode. More specifically, a differential varactor structure is provided comprising a substrate with an upper surface, a first vertical anode plate, and a second vertical anode plate electrically isolated from the first vertical anode plate. Moreover, a semiconductor fin comprising a cathode is between the first vertical anode plate and the second vertical anode plate, wherein the semiconductor fin, the first vertical anode plate, and the second vertical anode plate are each positioned over the substrate and perpendicular to the upper surface of the substrate.


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