The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 06, 2011
Filed:
Nov. 16, 2007
Douglas D Coolbaugh, Highland, NY (US);
Xuefeng Liu, South Burlington, VT (US);
Robert M. Rassel, Colchester, VT (US);
David C. Sheridan, Williston, VT (US);
Steven H. Voldman, South Burlington, VT (US);
Douglas D Coolbaugh, Highland, NY (US);
Xuefeng Liu, South Burlington, VT (US);
Robert M. Rassel, Colchester, VT (US);
David C. Sheridan, Williston, VT (US);
Steven H. Voldman, South Burlington, VT (US);
International Business Machines Corporation, Armonk, NY (US);
Abstract
The invention relates to noise isolation in semiconductor devices, and a design structure on which a subject circuit resides. A design structure is embodied in a machine readable medium used in a design process. The design structure includes a deep sub-collector located in a first epitaxial layer, and a doped region located in a second epitaxial layer, which is above the first epitaxial layer. The design structure further includes a reach-through structure penetrating from a surface of the device through the first and second epitaxial layers to the deep sub-collector, and a trench isolation structure penetrating from a surface of the device and surrounding the doped region.