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Starkville, MS, United States of America

Semisouth Laboratories, Inc.

USPTO Granted Patents = 23

% Expired Patents = 43.5

EPO Patents = 1

Forward Citations = 248

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10 inventors (with patents filed for the assignee):

Igor Sankin (15 out of 23 patents)

Joseph Neil Merrett (15 out of 19 patents)

Michael S Mazzola (6 out of 27 patents)

4. Robin Lynn Kelley (3 out of 7 patents)

5. Janna Casady (2 out of 3 patents)

6. Jeffrey Casady (2 out of 8 patents)

7. Janna B Dufrene (2 out of 2 patents)

8. David Charles Sheridan (2 out of 33 patents)

9. Lin Cheng (1 out of 40 patents)

10. Andrew P Ritenour (1 out of 31 patents)

23 patents: Sort by Forward Citations

1. 8017981 - Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making (2011-09-13),

2. 7994548 - Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making (2011-08-09),

3. 7977713 - Semiconductor devices with non-punch-through semiconductor channels having enhanced conduction and methods of making (2011-07-12),

4. 7969226 - High temperature gate drivers for wide bandgap semiconductor power JFETs and integrated circuits including the same (2011-06-28),

5. 7960198 - Method of making a semiconductor device with surge current protection (2011-06-14),

6. 7907001 - Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein (2011-03-15),

7. 7821015 - Silicon carbide and related wide-bandgap transistors on semi insulating epitaxy (2010-10-26),

8. 7820511 - Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making (2010-10-26),

9. 7638379 - Vertical-channel junction field-effect transistors having buried gates and methods of making (2009-12-29),

10. 7602228 - Half-bridge circuits employing normally on switches and methods of preventing unintended current flow therein (2009-10-13),

11. 7560325 - Methods of making lateral junction field effect transistors using selective epitaxial growth (2009-07-14),

12. 7556994 - Normally-off integrated JFET power switches in wide bandgap semiconductors and methods of making (2009-07-07),

13. 7510921 - Self-aligned silicon carbide semiconductor devices and methods of making the same (2009-03-31),

14. 7470967 - Self-aligned silicon carbide semiconductor devices and methods of making the same (2008-12-30),

15. 7416929 - Monolithic vertical junction field effect transistor and schottky barrier diode fabricated from silicon carbide and method for fabricating the same (2008-08-26),

Company Overview

Semisouth Laboratories, Inc. is a technology company based in Starkville, Mississippi, specializing in the development and manufacturing of advanced semiconductor devices. The company focuses on wide bandgap materials, particularly silicon carbide (SiC), which are pivotal in enhancing the efficiency and performance of power electronics. Semisouth's innovations cater to various sectors, including renewable energy, electric vehicles, and industrial applications, contributing to the advancement of sustainable technologies.

Profile summary synthesized from public USPTO records and patent filings.

Company Badge

USPTO Data Jan 1 1976 - Oct 6 2026

23 Patents

#1 in Starkville, MS

#20 in Mississippi

#14,415 in US

#27,649 in the World

Starkville, MS, United States of America

Semisouth Laboratories, Inc.

Forward Citations = 248

10 inventors:

Igor Sankin (15 out of 23 patents)

Joseph Neil Merrett (15 out of 19 patents)

Michael S Mazzola (6 out of 27 patents)

4. Robin Lynn Kelley (3 out of 7 patents)

5. Janna Casady (2 out of 3 patents)

IDiyas Innovation Intelligence. (2026). Company Patent Portfolio: Semisouth Laboratories, Inc.. Retrieved from https://idiyas.com/company/semisouth-laboratories

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

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