The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 8017981 B1

PDF
Full Text
Expired
Date of Patent:
Sep. 13, 2011

Filed:

Jun. 29, 2010
Applicants:

Igor Sankin, Perrysburg, OH (US);

Joseph Neil Merrett, Starkville, MS (US);

Inventors:

Igor Sankin, Perrysburg, OH (US);

Joseph Neil Merrett, Starkville, MS (US);

Assignee:

SemiSouth Laboratories, Inc., Starkville, MS (US);

Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 27/085 (2006.01);
U.S. Cl.
CPC ...
Abstract

Wide bandgap semiconductor devices including normally-off VJFET integrated power switches are described. The power switches can be implemented monolithically or hybridly, and may be integrated with a control circuit built in a single- or multi-chip wide bandgap power semiconductor module. The devices can be used in high-power, temperature-tolerant and radiation-resistant electronics components. Methods of making the devices are also described.


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Sankin, Igor. (2011). Normally-off integrated jfet power switches in wide bandgap semiconductors and methods of making (U.S. Patent No. 8017981). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8017981

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